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Part Number: NE856M23

 

 

 

 

Description: The NE856M23 transistor is designed for low cost amplifier and oscillator applications. Low noise figu...


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NE856M23 General Description


The NE856M23 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/ceramic substrate style "M23" package is ideal for today's portable wireless applications.

The NE856 is also available in chip, Micro-x, and eight different low cost plastic surface mount package styles.

NE856M23 Maximum Ratings

SYMBOLS
PARAMETERS
UNITS
RATINGS
VCEO
Collector to Emitter Voltage
V

20

VCBO
Collector to Base Voltage
V
12
VEBO
Emitter to Base Voltage
V
3
IC
Collector Current
mA
100
PT
Total Power Dissipation
mW
TBD
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
Note:
1. Operation in excess of any one of these parameters may result in permanent damage.

NE856M23 Features

• NEW MINIATURE M23 PACKAGE:
  World's smallest transistor package footprint
  leads are completely underneath package body
  Low profile/0.55 mm package height
  Ceramic substrate for better RF performance
• LOW NOISE FIGURE: NF = 1.4 dB at 1 GHz
• HIGH COLLECTOR CURRENT: IC MAX = 100 mA

NE856M23 datasheet

NE856M23
PDF/DataSheet Download

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