PH3075L,115

MOSFET TRENCH-3

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PH3075L,115 Picture
SeekIC No. : 00161206 Detail

PH3075L,115: MOSFET TRENCH-3

floor Price/Ceiling Price

Part Number:
PH3075L,115
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : +/- 15 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.028 Ohms Configuration : Single Triple Source
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : SOT-669 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Gate-Source Breakdown Voltage : +/- 15 V
Drain-Source Breakdown Voltage : 75 V
Continuous Drain Current : 30 A
Configuration : Single Triple Source
Resistance Drain-Source RDS (on) : 0.028 Ohms
Package / Case : SOT-669


Parameters:

Technical/Catalog InformationPH3075L,115
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs28 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 2070pF @ 25V
Power - Max75W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs19nC @ 5V
Package / CaseLFPak-4
FET FeatureLogic Level Gate
Drawing Number568; SOT669; ; 4
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PH3075L,115
PH3075L,115



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