RF1S4N100SM

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 4.3 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 3.5 Ohms
Package / Case : TO-263AB


Features:

• 4.3A, 1000V
• r _DS(ON) = 3.500W
• UIS Rating Curve (Single Pulse)
• -55to 150 Operating Temperature
• Related Literature
   - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

			UNITS
Drain to Source Breakdown Voltage (Note 1)	VDS	1000	V
Drain to Gate Voltage (RGS = 20kW) (Note 1) .	VDGR	1000	V
Continuous Drain Current	ID	4.6	V
Pulsed Drain Current (Note 3)	IDM	17	A
Gate to Source Voltage	VGS	±20	V
Single Pulse Avalanche Rating	EAS	Refer to UIS Curve	mj
		(Figures 4, 14, 15)
Maximum Power Dissipation	PD	150	W
Linear Derating Factor		1.2	W/
Operating and Storage Temperature	TJ, TSTG	-55 to 150
Soldering Temperature of Leads for 10s	T L Tpkg	300 260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

Description

The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. RF1S4N100SM are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type of RF1S4N100SM can be operated directly from an integrated circuit.

Formerly developmental type TA09850.