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RF1S60P03

Features: • 60A, 30V• r DS(ON) = 0.027W• Temperature Compensating PSPICE Model• Peak Current vs Pulse Width Curve• UIS Rating Curve• +175 Operating TemperatureSpecifications UNITS Drain Source Voltage VDSS -30 V Drain Gate Voltage VDGR -30...

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RF1S60P03: Features: • 60A, 30V• r DS(ON) = 0.027W• Temperature Compensating PSPICE Model• Peak Current vs Pulse Width Curve• UIS Rating Curve• +175 Operating TemperatureSpe...

RF1S60P03 Data Sheet

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Part Number:
RF1S60P03
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

• 60A, 30V
• r DS(ON) = 0.027W
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• +175 Operating Temperature


Specifications

      UNITS
Drain Source Voltage VDSS -30 V
Drain Gate Voltage VDGR -30 V
Gate Source Voltage VGS ±20 V
Drain Current RMS Continuous. ID 60 A
Pulsed Drain Current IDM Refer to Peak Current Curve  
Single Pulse Avalanche Rating EAS Figure 6  
Power Dissipation TC = +25 PD 176 W
Derate above +25. PT 1.17 W/
Operating and Storage Temperature TJ, TSTG -55 to 175

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.


Description

The RFG60P03, RFP60P03, RF1S60P03 and RF1S60P03SM P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding  performance. RF1S60P03 were designed for use in applications suc as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.




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