MFG:FAIRCHILD Package Cooled:TO-262/263 D/C:05+
MFG: FAIRCHILD
Package Cooled: TO-262/263
D/C: 05+
Description: The RFG60P03, RFP60P03, RF1S60P03 and RF1S60P03SM P-Channel power MOSFETs are manufactured using the M...
The RFG60P03, RFP60P03, RF1S60P03 and RF1S60P03SM P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications suc as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.
| UNITS | |||
| Drain Source Voltage | VDSS | -30 | V |
| Drain Gate Voltage | VDGR | -30 | V |
| Gate Source Voltage | VGS | ±20 | V |
| Drain Current RMS Continuous. | ID | 60 | A |
| Pulsed Drain Current | IDM | Refer to Peak Current Curve | |
| Single Pulse Avalanche Rating | EAS | Figure 6 | |
| Power Dissipation TC = +25 | PD | 176 | W |
| Derate above +25. | PT | 1.17 | W/ |
| Operating and Storage Temperature | TJ, TSTG | -55 to 175 |
RF1S60P03
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