MFG:FAIRCHILD/HARRIS/Iintersil Package Cooled:TO-263 D/C:08+
MFG: FAIRCHILD/HARRIS/Iintersil
Package Cooled: TO-263
D/C: 08+
Description: These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses fea...
These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.
Formerly developmental type TA49045.
| UNITS | |||
| Drain to Source Voltage (Note 1) | VDSS | -30 | V |
| Drain to Gate Voltage (RGS = 20kW)(Note 1) | VDGR | -30 | V |
| Gate to Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (Figure 2) | ID | 60 | A |
| Pulsed Drain Current (Note 3) | IDM | Refer to Peak Current Curve | |
| Single Pulse Avalanche Rating | EAS | Figure 6 | |
| Maximum Power Dissipation (Figure 1) | PD | 176 | W |
| Derate Above 25 | 1.17 | W/ | |
| Operating and Storage Temperature | TJ, TSTG | -55 to 175 | |
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334 |
TL Tpkg |
300 260 |
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
RF1S60P03SM
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