MFG:FAIRCHILD/HARRIS/Iintersil Package Cooled:TO-262 D/C:08+
MFG: FAIRCHILD/HARRIS/Iintersil
Package Cooled: TO-262
D/C: 08+
Description: These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced po...
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
| Drain to Source Breakdown Voltage (Note 1) | VDS | 200 | V |
| Drain to Gate Voltage (RGS = 20kW) (Note 1) | VDGR | 200 | V |
| Continuous Drain Current | ID | 18 | A |
| TC = 100 | ID | 11 | A |
| Pulsed Drain Current (Note 3) | IDM | 72 | A |
| Gate to Source Voltage | VGS | ±20 | V |
| Maximum Power Dissipation | PD | 125 | W |
| Dissipation Derating Factor | 1.0 | W/ | |
| Single Pulse Avalanche Energy Rating (Note 4) | EAS | 580 | mJ |
| Operating and Storage Temperature | TJ , TSTG | -55 to 150 | |
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See TB 334 |
TL Tpkg |
300 260 |
RF1S640
PDF/DataSheet Download
These are N-Channel enhancement mode silicon gate power field effect transistors.RF1S630SM are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power M...
These P-Channel power MOSFETs are manufactured using the MegaFET process. RF1S60P03SM, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. RF1S60P03SM were designed...
The RFG60P03, RFP60P03, RF1S60P03 and RF1S60P03SM P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outst...
These N-Channel power MOSFETs are manufactured using the MegaFET process. RF1S4N100SM, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for us...
The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. RF1S4N100SM are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high po...
Price: 1-2 USD
LCD panel, LM-FG53-22NDK, Sanyo, 11.3 inch
Price: 9.2-10 USD
fixed-point, digital signal processor (DSP), advanced modified Harvard architecture
Price: 4-4.5 USD
Low Loss DuoPack, IGBT, TO247, Low EMI, Low Gate Charge, Trench and Fieldstop technology, 1200V
Price: 30-40 USD
Integrated Circuit, Precision, Instrumentation Amplifier, DIP, differential inputs, high CMRR, 110dB
Price: 10-20 USD
Liquid Crystal Display, -0.3 to 4.0V, Wide viewing angle technology, 307,200 pixel elements
Price: 1-300 USD
NWS4805C, international power device, module
Price: 100-120 USD
LCD pannel, 0 to 6.0V, V16C6448AC, PPT Vision
Price: 0.1-5 USD
IGBT, ultrafast soft recovery diode, 600V, 40A, TO247, 158mΩ, IRGP20B60PDPBF
Price: 0.44-0.91 USD
complete analog-to-digital converter, MSOP8, -0.3 to +6.0 V, 24-bit Conversion
Price: 0.55-0.716 USD
IC INVERTER CTLR 28SSOP - BD9896FV-E2
Price: 1-1 USD
LAN Components, sop, Pulse transformers, LC modules, TLA series, Pulse transformer 2, 1500V Withst...
Price: 0.099-0.99 USD
TNY175DG, SOP-7, Power Integrations, Inc.
