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RF1S640

Features: • 18A, 200V• rDS(ON) = 0.180• Single Pulse Avalanche Energy Rated• SOA is Power Dissipation Limited• Nanosecond Switching Speed• Linear Transfer Characteristics• High Input Impedance• Related Literature- TB334 Guidelines for Soldering Surf...

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SeekIC No. : 004476162 Detail

RF1S640: Features: • 18A, 200V• rDS(ON) = 0.180• Single Pulse Avalanche Energy Rated• SOA is Power Dissipation Limited• Nanosecond Switching Speed• Linear Transfer Charact...

RF1S640 Data Sheet

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Part Number:
RF1S640
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 18A, 200V
• rDS(ON) = 0.180
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speed
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
 - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

Drain to Source Breakdown Voltage (Note 1) VDS 200 V
Drain to Gate Voltage (RGS = 20kW) (Note 1) VDGR 200 V
Continuous Drain Current ID 18 A
TC = 100 ID 11 A
Pulsed Drain Current (Note 3) IDM 72 A
Gate to Source Voltage VGS ±20 V
Maximum Power Dissipation PD 125 W
Dissipation Derating Factor   1.0 W/
Single Pulse Avalanche Energy Rating (Note 4) EAS 580 mJ
Operating and Storage Temperature TJ , TSTG -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s.
Package Body for 10s, See TB 334
TL
Tpkg
300
260




Description

These are N-Channel enhancement mode silicon gate power field effect transistors. RF1S640 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types ofRF1S640 can be operated directly from integrated circuits.




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