RF1S640SM

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 18 A
Drain-Source Breakdown Voltage : 200 V
Resistance Drain-Source RDS (on) : 0.18 Ohms
Package / Case : TO-263AB


Features:

• 18A, 200V
• rDS(ON) = 0.180
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speed
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
 - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

Drain to Source Breakdown Voltage (Note 1)	VDS	200	V
Drain to Gate Voltage (RGS = 20kW) (Note 1)	VDGR	200	V
Continuous Drain Current	ID	18	A
TC = 100	ID	11	A
Pulsed Drain Current (Note 3)	IDM	72	A
Gate to Source Voltage	VGS	±20	V
Maximum Power Dissipation	PD	125	W
Dissipation Derating Factor		1.0	W/
Single Pulse Avalanche Energy Rating (Note 4)	EAS	580	mJ
Operating and Storage Temperature	TJ , TSTG	-55 to 150
Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See TB 334	TL Tpkg	300 260

Description

These are N-Channel enhancement mode silicon gate power field effect transistors. RF1S640SM are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types ofRF1S640SM can be operated directly from integrated circuits.