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RF1S9530SM

Features: • 12A, 100V• rDS(ON) = 0.300W• Single Pulse Avalanche Energy Rated• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance• Related Literature - TB334, Guidelines for Soldering ...

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RF1S9530SM: Features: • 12A, 100V• rDS(ON) = 0.300W• Single Pulse Avalanche Energy Rated• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Chara...

RF1S9530SM Data Sheet

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Part Number:
RF1S9530SM
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 12A, 100V
• rDS(ON) = 0.300W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
  - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

Drain to Source Breakdown Voltage (Note 1) VDS -100 V
Drain to Gate Voltage (RGS = 20kW) (Note 1) VDGR -100 V
Continuous Drain Current ID -12 A
TC = 100 ID -7.5 A
Pulsed Drain Current (Note 3) IDM -48 A
Gate to Source Voltage VGS ±20 V
Maximum Power Dissipation PD 75 W
Dissipation Derating Factor   0.6 W/
Single Pulse Avalanche Energy Rating (Note 4) EAS 500 mJ
Operating and Storage Temperature TJ, TSTG -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s.
Package Body for 10s, See Techbrief 334
TL
Tpkg		 300
260




Description

These are P-Channel enhancement mode silicon gate power field effect transistors. RF1S9530SM are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs RF1S9530SM are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. The high input impedance allows these types to be operated directly from integrated circuits.




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