RF1S9540SM

Features:

• 19A, 100V
• rDS(ON) = 0.200W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
       -  TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Pinout




Specifications

	IRF9540, RF1S9540SM	UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . VDS	-100	V
Drain to Gate Voltage (RGS = 20k) (Note 1) . .. .. . . .VDGR	-100	V
Continuous Drain Current . . . . . . . . . . ID	-19	A
TC = 100 . . . . . . . . . . . . . . . . . . ID	-12	A
Pulsed Drain Current (Note 3) . . . . . . . . . IDM	-76	A
Gate to Source Voltage . . . . . . .. . . . . . VGS	±20	V
Maximum Power Dissipation (Figure 1) . . . . . . . . PD	150	W
Linear Derating Factor (Figure 1) . . . . . . . . . . .	1	W/
Single Pulse Avalanche Energy Rating (Note 4). . .. . EAS	960	mJ
Operating and Storage Temperature . . . . . . . . TJ, TSTG	-55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . .TL	300
Package Body for 10s, See Techbrief 334 . . . . . . . Tpkg	260

Description

These are P-Channel enhancement mode silicon gate power field effect transistors. RF1S9540SM are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs RF1S9540SM are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. RF1S9540SM can be operated directly from integrated circuits.

Formerly Developmental Type TA17521.