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RF1S9630SM

Features: • 6.5A, 200V• r DS(ON) = 0.800W• Single Pulse Avalanche Energy Rated• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance• Related Literature - TB334 Guidelines for Soldering...

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RF1S9630SM: Features: • 6.5A, 200V• r DS(ON) = 0.800W• Single Pulse Avalanche Energy Rated• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Cha...

RF1S9630SM Data Sheet

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Part Number:
RF1S9630SM
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

• 6.5A, 200V
• r DS(ON) = 0.800W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
   - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

      UNITS
Drain to Source Voltage (Note 1) VDSS -200 V
Drain to Gate Voltage (RGS = 20kW)(Note 1) VDGR -200 V
Continuous Drain Current
TC = 100		 ID
ID		 -6.5
-4		 V
Pulsed Drain Current (Note 3) IDM -26 A
Gate to Source Voltage VGS ±20  
Maximum Power Dissipation PD 75  
Dissipation Derating Factor   0.6 W
Single Pulse Avalanche Energy Rating (Note 4) EAS 500 W/
Operating and Storage Temperature TJ, TSTG -55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s.
Package Body for 10s, See Techbrief 334		 TL
Tpkg		 300
260

CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.




Description

These are P-Channel enhancement mode silicon gate power field effect transistors. RF1S9630SM vare advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode  of operation. All of these power MOSFETs RF1S9630SM are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits.

Formerly developmental type TA17512.




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