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Part Number: SD57120

 

MFG: ST

 

 

Description: The SD57120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor des...


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SD57120 General Description


The SD57120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57120 is designed for high gain and broadband performance operating in common source mode at 28V. Its internal matching makes it ideal for base station applications requiring high linearity.

SD57120 Maximum Ratings

Symbol Parameter Value Unit
V(BR)DSS Drain Source Voltage 65 V
VGS Gate-Source Voltage ± 20 V
ID Drain Current 14 A
PDISS Power Dissipation (@ Tc= 70oC) 236 W
TJ Max. Operating Junction Temperature 200 °C
TSTG Storage Temperature - 65 to +150 °C

SD57120 Connection Diagram

SD57120 Connection Diagram

SD57120 datasheet

SD57120
PDF/DataSheet Download

  • Datasheet: SD57120
  • File Size: 64815 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
  • Click here to Download

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