SD57120

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Drain-Source Breakdown Voltage : 65 V
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 20 V
Frequency : 1 GHz
Output Power : 120 W
Continuous Drain Current : 14 A
Gain : 14 dB at 960 MHz
Package / Case : M252


Pinout




Specifications

Symbol	Parameter	Value	Unit
V(BR)DSS	Drain Source Voltage	65	V
VGS	Gate-Source Voltage	± 20	V
ID	Drain Current	14	A
PDISS	Power Dissipation (@ Tc= 70oC)	236	W
TJ	Max. Operating Junction Temperature	200	°C
TSTG	Storage Temperature	- 65 to +150	°C

Description

The SD57120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57120 is designed for high gain and broadband performance operating in common source mode at 28V. Its internal matching makes it ideal for base station applications requiring high linearity.

Parameters:

Technical/Catalog Information	SD57120
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	LDMOS
Voltage - Rated	65V
Current Rating	1uA
Package / Case	M252
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	SD57120 SD57120 497 5481 5 ND 49754815ND 497-5481-5