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SFS9Z34

MOSFET P-CH/60V/12A/0.14OHM

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SeekIC No. : 00160547 Detail

SFS9Z34: MOSFET P-CH/60V/12A/0.14OHM

SFS9Z34 Data Sheet

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Part Number:
SFS9Z34
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/25

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 60 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : - 12 A
Resistance Drain-Source RDS (on) : 0.14 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220F Packaging : Tube    

Description

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220F
Drain-Source Breakdown Voltage : - 60 V
Continuous Drain Current : - 12 A
Resistance Drain-Source RDS (on) : 0.14 Ohms


Features:

` Avalanche Rugged Technology
` Rugged Gate Oxide Technology
` Lower Input Capacitance
` Improved Gate Charge
` 175 Operating Temperature
` Extended Safe Operating Area
` Lower Leakage Current : 10 A (Max.) @ VDS = -60V
` Low RDS(ON) : 0.106 (Typ.)


Specifications

Symbol
Characteristic
Value
Units
VDSS

Drain-to-Source Voltage
-60
V
ID
 Continuous Drain Current ( TC=25)
-12
A
Continuous Drain Current ( TC=100)
-8.4
IDM
 Drain Current-Pulsed
-48
A
VGS
 Gate-to-Source Voltage
±30
V
EAS
 Single Pulsed Avalanche Energy
555
mJ
IAR
 Avalanche Current
-12
A
EAR
 Repetitive Avalanche Energy
3.6
mJ
dv/dt
 Peak Diode Recovery dv/dt
-5.5
V/ns
PD
 Total Power Dissipation ( TC=25)
Linear Derating Factor
36
0.24
W
W/°C
TJ,TSTG
 Operating Junction and
Storage Temperature Range
- 55 to +175
°C
TL
 Maximum Lead Temp. for Soldering
Purposes, 1/8" from case for 5-seconds
300



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