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SI4884

Features: · Low on-state resistance · Fast switching.Application· DC to DC converters · Portable equipment applicationsPinoutSpecifications Symbol Parameter Conditions Min Max VDS drain-source voltage (DC) Tj = 25 to 150 °C - 30 VGS gate-source voltage - ±20 ID drain cu...

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SeekIC No. : 004490370 Detail

SI4884: Features: · Low on-state resistance · Fast switching.Application· DC to DC converters · Portable equipment applicationsPinoutSpecifications Symbol Parameter Conditions Min Max VDS drain...

SI4884 Data Sheet

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Part Number:
SI4884
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·  Low on-state resistance
·  Fast switching.


Application

·  DC to DC converters
·  Portable equipment applications


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max
VDS drain-source voltage (DC) Tj = 25 to 150 °C - 30
VGS gate-source voltage   - ±20
ID drain current Tsp = 25 °C; Figure 2 and 3 - 12
IDM peak drain current Tsp = 25 °C; pulsed; Figure 3 - 45
Ptot total power dissipation Tsp = 25 °C; Figure 1 - 2.5
Tstg storage temperature   -55 +150
Tj junction temperature   -55 +150
Source-drain diode
IS source (diode forward) current Tsp = 25 °C - 12



Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Product availability: SI4884 in SOT96-1 (SO8).


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