SI7501DN-T1

The feature of SI7501DN-T1 are as follows: (1)TrenchFET Power MOSFET; (2)New Low Thermal Resistance PowerPAK Package with Low 1.07-mm Profile.

The absolute maximum ratings of the SI7501DN-T1 are: (1)drain-source voltage: 30V; (2)gate-source voltage: ±20; (3)continuous drain current (TJ = 150)a TA = 25: 7.7A 10secs, 5.4A steady state, TA = 70: 4.7A 10secs, 4.3A steady state; (4)pulsed drain current: 25A; (5)continuous source current (diode conduction)a: 2.6A 10secs and 1.3A steady state; (6)maximum power dissipationa TA = 25: 3.1W 10secs and 1.3W steady state, TA = 70: 2W 10secs and 1.0W steady state; (7)Operating junction and storage temperature range TJ, Tstg: -55 to 150 .

The following is about the electrical characteristics of SI7501DN-T1: (1)gate threshold voltage: -1.0V min and -3V max at VDS = VGS, ID = -250 A; (2)gate body leakage: ±200nA max at VDS = 0 V, VGS = ±25 V; (3)zero gate voltage drain current: -1A max at VDS = .30 V, VGS = 0 V and -5A max at VDS = .30 V, VGS = 0 V, TJ = 55; (4)on state drain currenta: -25A min at VDS -5 V, VGS = -10 V; (5)drain source on state resistancea: 0.041 min and 0.051 max at VGS = .10 V, ID = -6.4 A; (6)forward transconductancea: 13S typical at VDS = -15 V, ID = -6.4 A; (7)diode forward voltagea: -0.80V typical and -1.2V max at IS = -1.7 A, VGS = 0 V.