Features: · TrenchFET® Power MOSFET· New Low Thermal Resistance PowerPAK®Package with Low 1.07-mm ProfileApplication· Backlight Inverter· DC/DC Converter− 4-Cell BatterySpecifications Parameter Symbol N-Channel P-Channel Unit 10 secs Steady State 10 secs Steady State ...
Si7501DN: Features: · TrenchFET® Power MOSFET· New Low Thermal Resistance PowerPAK®Package with Low 1.07-mm ProfileApplication· Backlight Inverter· DC/DC Converter− 4-Cell BatterySpecifications ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
DescriptionThe feature of SI7501DN-T1 are as follows: (1)TrenchFET Power MOSFET; (2)New Low Therma...
| Parameter | Symbol | N-Channel | P-Channel | Unit | |||
| 10 secs | Steady State | 10 secs | Steady State | ||||
| Drain-Source Voltage | VDS | -30 | 30 | V | |||
| Gate-Source Voltage | VGS | ±25 | ±20 | ||||
| Continuous Drain Current (TJ = 150)a | TA = 25 | ID | -6.4 | -4.5 | 7.7 | 5.4 | A |
| TA = 70 | -5.1 | -3.6 | 4.7 | 4.3 | |||
| Pulsed Drain Current | IDM | -25 | 25 | ||||
| Continuous Source Current (Diode Conduction)a | IS | -2.6 | -1.3 | 2.6 | 1.3 | ||
| Maximum Power Dissipationa | TA = 25 | PD | 3.1 | 1.6 | 3.1 | 1.6 | W |
| TA = 70 | 2.2 | 1.0 | 2 | 1.0 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |||||