MOSFET N/P-Ch MOSFET 30V 51/35mohoms @10V
SI7501DN-T1-GE3: MOSFET N/P-Ch MOSFET 30V 51/35mohoms @10V
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DescriptionThe feature of SI7501DN-T1 are as follows: (1)TrenchFET Power MOSFET; (2)New Low Therma...
| Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V, +/- 25 V | Continuous Drain Current : | 5.4 A | ||
| Resistance Drain-Source RDS (on) : | 35 mOhms at N Channel, 51 mOhms at P Channel | Configuration : | Dual Common Quad Drain | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | PowerPAK 1212 | Packaging : | Reel |