SI7501DN-T1-E3, US $ .26-.32 , Vishay/Siliconix, SI7501DN-T1-E3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00156705 Detail

SI7501DN-T1-E3: MOSFET COMPLEMENTARY 30-V (D-S)

SI7501DN-T1-E3 Data Sheet

US $ .26~.32 / Piece | Get Latest Price

Part Number:: SI7501DN-T1-E3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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0~1930
1930~3000
3000~6000

Unit Price
$.32
$.27
$.26

Processing time
15 Days
15 Days
15 Days

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Upload time: 2025/12/21

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Recent History
What is this?

Si7501DN evaluate
Features: · TrenchFET® Power MOSFET· New Low Thermal Resistance PowerPAK®Package with Low ...
SI7501DN-T1 evaluate
DescriptionThe feature of SI7501DN-T1 are as follows: (1)TrenchFET Power MOSFET; (2)New Low Therma...
SI7501DN-T1-GE3 evaluate
US $.25 - .32 / Piece

MOSFET N/P-Ch MOSFET 30V 51/35mohoms @10V

Product Details

Quick Details

Transistor Polarity :	N and P-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 20 V, +/- 25 V	Continuous Drain Current :	6.4 A, 7.7 A
Resistance Drain-Source RDS (on) :	51 mOhms, 35 mOhms	Configuration :	Dual
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	PowerPAK 1212-8	Packaging :	Reel

Description

Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Dual
Transistor Polarity : N and P-Channel
Package / Case : PowerPAK 1212-8
Gate-Source Breakdown Voltage : +/- 20 V, +/- 25 V
Continuous Drain Current : 6.4 A, 7.7 A
Resistance Drain-Source RDS (on) : 51 mOhms, 35 mOhms

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SI7501DN-T1-E3

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