SIDC110D170H

DIODE FAST SW 1700V 200A WAFER

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SeekIC No. : 003427354 Detail

SIDC110D170H: DIODE FAST SW 1700V 200A WAFER

floor Price/Ceiling Price

Part Number:
SIDC110D170H
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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evaluate  (4.8 stars)

Upload time: 2025/12/25

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Product Details

Quick Details

Series: - Manufacturer: Infineon Technologies
Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1700V (1.7kV)
Current - Average Rectified (Io): 200A (DC) Current - Average Rectified (Io) (per Diode): -
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 200A Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): - Drain Current (Idss at Vgs=0) : 10 mA to 18 mA
Current - Reverse Leakage @ Vr: 27µA @ 1700V Capacitance @ Vr, F: -
Diode Configuration: - Mounting Type: Surface Mount
Package / Case: Wafer Supplier Device Package: Sawn on foil    

Description

Series: -
Diode Type: Standard
Current - Average Rectified (Io) (per Diode): -
Diode Configuration: -
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Capacitance @ Vr, F: -
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 1700V (1.7kV)
Manufacturer: Infineon Technologies
Package / Case: Wafer
Supplier Device Package: Sawn on foil
Current - Average Rectified (Io): 200A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 200A
Current - Reverse Leakage @ Vr: 27µA @ 1700V


Features:

` 1700V EMCON 3 technology 200 m chip
` soft, fast switching
` low reverse recovery charge
` small temperature coefficient



Application

· resonant applications, drives


Specifications

Parameter Symbol Condition Value Unit
Repetitive peak reverse voltage VRRM 1700 V
Continuous forward current limited by
Tjmax
IF 200 A
Single pulse forward current
(depending on wire bond configuration)
IFSM tP = 10 ms sinusoi 930 A
Maximum repetitive forward current
limited by Tjmax
IFRM 400 A
Operating junction and storage
temperature
Tj , Tstg -55...+150 °C



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