MFG:POLYFET Package Cooled:(LX)high-frequency
MFG: POLYFET
Package Cooled: (LX)high-frequency
Description: Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for ...
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet"™ process features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.
|
Total Device Dissipation |
Junction to Case Thermal Resistance |
Maximum Junction Temperature |
Storage Temperature |
DC Drain Current |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
|
270 Watts |
065/W |
200 |
-65 to 150 |
16.0A |
70V |
70V |
20V |
SM401
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