Features: • Faster Switching• Lower Leakage• 100% Avalanche Tested• New T247clip Package (Clipmounted TO247 Package)Specifications VDSS Drain Source Voltage 600 V ID Continuous Drain Current 38 A IDM Pulsed Drain Current 1 152 A VGS Gate Source Vol...
SML60T38: Features: • Faster Switching• Lower Leakage• 100% Avalanche Tested• New T247clip Package (Clipmounted TO247 Package)Specifications VDSS Drain Source Voltage 600 V ...
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| VDSS |
Drain Source Voltage |
600 |
V |
| ID | Continuous Drain Current | 38 | A |
| IDM | Pulsed Drain Current 1 | 152 | A |
| VGS | Gate Source Voltage | ±30 | V |
| VGSM | Gate Source Voltage Transient | ±40 | |
| PD | Total Power Dissipation @ Tcase = 25°C | 520 | W |
| Derate Linearly | 4.16 | W/°C | |
| TJ , TSTG | Operating and Storage Junction Temperature Range | 55 to 150 | °C |
| TL | Lead Temperature : 0.063" from Case for 10 Sec. | 300 | |
| IAR | Avalanche Current1 (Repetitive and Non-Repetitive) | 38 | A |
| EAR | Repetitive Avalanche Energy 1 | 50 | mJ |
| EAS | Single Pulse Avalanche Energy 2 | 2500 |
StarMOS SML60T38 is a new generation of high voltage NChannel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the
on-resistance. StarMOS SML60T38 also achieves faster switching speeds through optimised gate layout.