MOSFET COOL MOS N-CH 800V 2A
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Features: · New revolutionary high voltage technology· Ultra low gate charge· Periodic avalanche r...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 800 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 2 A | ||
| Resistance Drain-Source RDS (on) : | 2.7 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TO-252 | Packaging : | Reel |
| Technical/Catalog Information | SPD02N80C3 |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 2A |
| Rds On (Max) @ Id, Vgs | 2.7 Ohm @ 1.2A, 10V |
| Input Capacitance (Ciss) @ Vds | 290pF @ 100V |
| Power - Max | 42W |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 16nC @ 10V |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | SPD02N80C3 SPD02N80C3 SPD02N80C3INDKR ND SPD02N80C3INDKRND SPD02N80C3INDKR |