MOSFET Automotive 100 V 70 A
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 70 A | ||
| Resistance Drain-Source RDS (on) : | 16 m Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220AB | Packaging : | Tube |
·N-Channel
· Enhancement mode
· Logic Level
·175°C operating temperature
· Avalanche rated
· dv/dt rated
| Parameter | Symbol | Value | Unit |
| Continuous drain current TC = 25 °C TC = 100 °C |
ID | 70 50 |
A |
| Pulsed drain current TC = 25 °C |
ID puls | 280 | |
| Avalanche energy, single pulse ID =70A, VDD = 25 V, RGS = 25 |
EAS | 700 | mJ |
| Avalanche energy, periodic limited by Tjmax | EAR | 25 | |
| Reverse diode dv/dt IS = 70A, VDS = 0 V, di/dt = 200 A/s |
dv/dt | 6 | kV/s |
| Gate source voltage | VGS | ±20 | V |
| Power dissipation TC = 25 °C |
Ptot | 250 | W |
| Operating and storage temperature | Tj , Tstg | -55... +175 | °C |
| IEC climatic category; DIN IEC 68-1 | 55/175/56 |
| Technical/Catalog Information | SPP70N10L |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 70A |
| Rds On (Max) @ Id, Vgs | 16 mOhm @ 50A, 10V |
| Input Capacitance (Ciss) @ Vds | 4540pF @ 25V |
| Power - Max | 250W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 240nC @ 10V |
| Package / Case | TO-220 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | SPP70N10L SPP70N10L SPP70N10LIN ND SPP70N10LINND SPP70N10LIN |