SPP77N06S2-12

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Gate Charge (Qg) @ Vgs: 60nC @ 10V
Drain to Source Voltage (Vdss): 55V
Power - Max: 158W
Current - Continuous Drain (Id) @ 25° C: 80A
Manufacturer: Infineon Technologies
Series: OptiMOS™
Input Capacitance (Ciss) @ Vds: 2350pF @ 25V
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: P-TO220-3
Rds On (Max) @ Id, Vgs: 12 mOhm @ 38A, 10V


Features:

· N-Channel
· Enhancement mode
· 175°C operating temperature
· Avalanche rated
· dv/dt rated


Specifications

Parameter	Symbol	Value	Unit
Continuous drain current TC = 25 °C	ID	80 56	A
Pulsed drain current TC = 25 °C	ID puls	320
Avalanche energy, single pulse ID =-77A, VDD = 25 V, RGS = 25	EAS	280	mJ
Repetitive avalanche energy, limited by Tjmax1)	EAR	16
Reverse diode dv/dt IS = 77 A, VDS = 44 , di/dt = 200 A/s, Tjmax = 175 °C	dv/dt	6	kV/s
Gate source voltage	VGS	±20	V
Power dissipation TC = 25 °C	Ptot	158	W
Operating and storage temperature	Tj , Tstg	-55... +175	°C
IEC climatic category; DIN IEC 68-1		55/175/56

¹Defined by design. Not subject to production test.

Parameters:

Technical/Catalog Information	SPP77N06S2-12
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	80A
Rds On (Max) @ Id, Vgs	12 mOhm @ 38A, 10V
Input Capacitance (Ciss) @ Vds	2350pF @ 25V
Power - Max	158W
Packaging	Tube
Gate Charge (Qg) @ Vgs	60nC @ 10V
Package / Case	TO-220
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	SPP77N06S2 12 SPP77N06S212