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Part Number: SPP7407

 

 

 

 

Description: The SPP7407 is the P-Channel logic enhancement mode power field effect transistors are produced using ...


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SPP7407 General Description


The SPP7407 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching ,and low in-line power loss are needed in a very small outline surface mount package.

SPP7407 Maximum Ratings

Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
-20
V
Gate Source Voltage
VGSS
±12
V
Continuous Drain Current(TJ=150) TA=25
ID
-2.3
A
TA=70
-1.7
Pulsed Drain Current
IDM
-6
A
Continuous Source Current(Diode Conduction)
IS
-1.4
A
Power Dissipation TA=25
PD
0.33
W
TA=70
0.21
Operating Junction Temperature
TJ
-55/150
Storage Temperature Range
TSTG
-55/150
Thermal Resistance-Junction to Ambient
RJA
105
/W

SPP7407 Features

-20V/-3.4A,RDS(ON)= 100mΩ@VGS=-4.5V
-20V/-2.4A,RDS(ON)= 125mΩ@VGS=-2.5V
-20V/-1.7A,RDS(ON)= 150mΩ@VGS=-1.8V
-20V/-1.0A,RDS(ON)= 220mΩ@VGS=-1.25V
Super high density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability
SOT-323 ( SC70 ) package design

SPP7407 Typical Application

 Power Management in Note book
 Portable Equipment  
 Battery Powered System
DC/DC Converter
 Load Switch
DSC
LCD Display inverter

SPP7407 Connection Diagram

SPP7407  Connection Diagram

SPP7407 datasheet

SPP7407
PDF/DataSheet Download

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