Features: -20V/-3.4A,RDS(ON)= 100mΩ@VGS=-4.5V -20V/-2.4A,RDS(ON)= 125mΩ@VGS=-2.5V -20V/-1.7A,RDS(ON)= 150mΩ@VGS=-1.8V -20V/-1.0A,RDS(ON)= 220mΩ@VGS=-1.25V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capabi...
SPP7407: Features: -20V/-3.4A,RDS(ON)= 100mΩ@VGS=-4.5V -20V/-2.4A,RDS(ON)= 125mΩ@VGS=-2.5V -20V/-1.7A,RDS(ON)= 150mΩ@VGS=-1.8V -20V/-1.0A,RDS(ON)= 220mΩ@VGS=-1.25V Super high den...
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-20V/-3.4A,RDS(ON)= 100mΩ@VGS=-4.5V
-20V/-2.4A,RDS(ON)= 125mΩ@VGS=-2.5V
-20V/-1.7A,RDS(ON)= 150mΩ@VGS=-1.8V
-20V/-1.0A,RDS(ON)= 220mΩ@VGS=-1.25V
Super high density cell design for extremely low RDS (ON)
Exceptional on-resistance and maximum DC current capability
SOT-323 ( SC70 ) package design
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter

|
Parameter |
Symbol |
Typical |
Unit | |
| Drain-Source Voltage |
VDSS |
-20 |
V | |
| Gate Source Voltage |
VGSS |
±12 |
V | |
| Continuous Drain Current(TJ=150) | TA=25 |
ID |
-2.3 |
A |
| TA=70 |
-1.7 | |||
| Pulsed Drain Current |
IDM |
-6 |
A | |
| Continuous Source Current(Diode Conduction) |
IS |
-1.4 |
A | |
| Power Dissipation | TA=25 |
PD |
0.33 |
W |
| TA=70 |
0.21 | |||
| Operating Junction Temperature |
TJ |
-55/150 |
| |
| Storage Temperature Range |
TSTG |
-55/150 |
| |
| Thermal Resistance-Junction to Ambient |
RJA |
105 |
/W | |
The SPP7407 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density,DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices of the SPP7407 are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching ,and low in-line power loss are needed in a very small outline surface mount package.