MOSFET 30V 62A 7.1W 10mohm @ 10V
SQD50N03-09-GE3: MOSFET 30V 62A 7.1W 10mohm @ 10V
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SpecificationsDescriptionThe SQD50AB100 is designed as one kind of high speed, high power darlingt...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 62 A | ||
Resistance Drain-Source RDS (on) : | 0.01 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252 | Packaging : | Reel |