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STD35NF06L

Features: ` TYPICAL RDS(on) = 0.014 ` LOW THRESHOLD DRIVE` GATE CHARGE MINIMIZED` SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 )Application· DC-AC CONVERTERS· AUTOMOTIVE SWITCHING APPLICATIONSpecifications Symbol Parameter Value Unit VDS Collector-So...

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SeekIC No. : 004507459 Detail

STD35NF06L: Features: ` TYPICAL RDS(on) = 0.014 ` LOW THRESHOLD DRIVE` GATE CHARGE MINIMIZED` SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX T4 )Application· DC-AC CONVERTERS· AUTOMOT...

STD35NF06L Data Sheet

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Part Number:
STD35NF06L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/28

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Product Details

Description



Features:

` TYPICAL RDS(on) = 0.014
` LOW THRESHOLD DRIVE
` GATE CHARGE MINIMIZED
` SURFACE-MOUNTING DPAK (TO-252)
    POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")


Application

 · DC-AC CONVERTERS
 · AUTOMOTIVE SWITCHING APPLICATION


Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
60
V
VDGR Drain-gate Voltage (RGS = 20 k)

60
V
VGS Gate-Source Voltage
±16
V
ID Drain Current (continuous) at TC = 25
35
A
ID Drain Current (continuous) at TC = 100
24.5
A
IDM(`) Drain Current (pulsed)
140
A
Ptot Total Dissipation at TC = 25
80
W
  Derating Factor
0.67
W/
dv/dt(1) Peak Diode Recovery voltage slope
5
V/ns
EAS(2) Single Pulse Avalanche Energy
280
mJ
Tstg Storage Temperature
-55 to 175
Tj Max. Operating Junction Temperature
(`) Pulse width limited by safe operating area.
(1) ISD 35A, di/dt 100A/s, VDD  V(BR)DSS, Tj   TJMAX
(2) Starting Tj = 25, ID = 30A, VDD =30V


Description

This STD35NF06L Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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