Features: TYPICAL RDS(on) = 0.013 WOPTIMIZED FOR HIGH SWTICHING OPERATIONSLOW THRESHOLD DRIVEADD SUFFIX T4 FORORDERING IN TAPE & REELApplicationHIGH CURRENT, HIGH SPEED SWITCHINGMOTOR CONTROL, AUDIO AMPLIFIERSDC-DC & DC-AC CONVERTERSSpecifications Symbol Parameter Value U...
STD38NF03L: Features: TYPICAL RDS(on) = 0.013 WOPTIMIZED FOR HIGH SWTICHING OPERATIONSLOW THRESHOLD DRIVEADD SUFFIX T4 FORORDERING IN TAPE & REELApplicationHIGH CURRENT, HIGH SPEED SWITCHINGMOTOR CONTROL,...
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|
Symbol |
Parameter |
Value |
Unit |
|
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V |
|
VDGR |
Drain- gate Voltage (RGS = 20 kW) |
30 |
V |
|
VGE |
Gate-Emitter Voltage |
± 20 |
V |
|
ID(*) |
Drain Current (continuous) at TC = 25°C |
38 |
A |
|
ID |
Drain Current (continuous) at TC = 100°C |
27 |
A |
|
IDM () |
Drain Current (pulsed) |
152 |
A |
|
PTOT |
Total Dissipation at TC = 25°C |
45 |
W |
|
|
Derating Factor |
0.3 |
W/°C |
|
Tstg |
Storage Temperature |
- 65 to 175 |
°C |
|
Tj |
Max. Operating Junction Temperature |
175 |
°C |
This Power MOSFET STD38NF03L is the latest development of STMicroelectronics unique "Single Feature Size]" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.