Features: ` TYPICAL RDS(on) = 2.8` EXTREMELY HIGH dv/dt CAPABILITY` ESD IMPROVED CAPABILITY)`100% AVALANCHE TESTED` NEW HIGH VOLTAGE BENCHMARK` GATE CHARGE MINIMIZEDApplication· AC ADAPTORS AND BATTERY CHARGERS· SWITH MODE POWER SUPPLIES (SMPS)· LIGHTINGSpecifications Symbol Parameter Val...
STD3NK50Z: Features: ` TYPICAL RDS(on) = 2.8` EXTREMELY HIGH dv/dt CAPABILITY` ESD IMPROVED CAPABILITY)`100% AVALANCHE TESTED` NEW HIGH VOLTAGE BENCHMARK` GATE CHARGE MINIMIZEDApplication· AC ADAPTORS AND BATT...
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| Symbol | Parameter |
Value |
Unit | ||
| DPAK/IPAK |
TO-92 | ||||
| VDS | Collector-Source Voltage (VGS = 0 V) |
500 |
V | ||
| VDGR | Drain-gate Voltage (RGS = 20 k) |
500 |
V | ||
| VGS | Gate-Source Voltage |
± 30 |
V | ||
| ID | Drain Current (continuous) at TC = 25 |
2.3 |
0.5 |
A | |
| ID | Drain Current (continuous) at TC = 100 |
1.45 |
0.32 |
A | |
| IDM(`) | Drain Current (pulsed) |
9.2 |
2 |
A | |
| PTOT | Total Dissipation at TC = 25 |
45 |
3 |
W | |
| Derating Factor |
0.36 |
0.025 |
W/ | ||
| VESD(G-S) | Gate source ESD(HBM-C=100pF, R=1.5K) |
2000 |
V | ||
| dv/dt(1) | Peak Diode Recovery voltage slope |
4.5 |
V/ns | ||
| Tj Tstg |
Operating Junction Temperature Storage Temperature |
-55 to 150 |
|||
The STD3NK50Z SuperMESH™ series is obtained through an extreme opyimization of ST's well established strip based PowerMESH™ layout. In addition to pushing on-resistance significatly down, special care is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage MOSFETs icluding revolutionary MDmesh™ products.