STD3NK90Z

Features:

 TYPICAL RDS(on) = 4.1 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURINGREPEATIBILITY


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PFC
LIGHTING


Specifications

Symbol	Parameter	Value			Unit
		STP3NK90Z	STP3NK90ZFP	STD3NK90Z STD3NK90Z-1
VDS	Drain-source Voltage (VGS =0)	900			V
VDGR	DraingateVoltage (RGS=20kΩ)	900			V
VGS	Gate- source Voltage	± 30			V
ID	Drain Current (continuous) at TC = 25°C	3	3 (*)	3	A
ID	Drain Current (continuous) at TC = 100°C	1.89	3 (*)	1.89	A
IDM (·)	Drain Current (pulsed)	12	12 (*)	12	A
PTOT	Total Dissipation at TC = 25°C	90	25	90	W
	Derating Factor	0.72	0.2	0.72	W/°C
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5KΩ)	4000			V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5			V/ns
VISO	Insulation Withstand Voltage (DC)	.	2500	.	V
Tj Tstg	Operating Junction Temperature Storage Temperature	-55to150			°C

Description

The STD3NK90Z SuperMESH™ series is obtained through anextreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushingon-resistance significantly down, special care is tak-en to ensure a very good dv/dt capability for themost demanding applications. Such series comple-ments ST full range of high voltageMOSFETs in-cluding revolutionary MDmesh™ products.