STD3NM60-1

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 1.5 Ohms
Drain-Source Breakdown Voltage : 600 V
Package / Case : IPAK
Continuous Drain Current : 3 A


Features:

`TYPICAL R<sub>DS (on</sub>) = 1.3
`HIGH dv/dt AND AVALANCHE CAPABILITIES
`IMPROVED ESD CAPABILITY
`LOW INPUT CAPACITANCE AND GATE  CHARGE
`LOW GATE INPUT RESISTANCE
`TIGHT PROCESS CONTROL AND HIGH
`MANUFACTORING YIELDS


Application

The MDmesh^TM family is very suitable for increase the power density of high voltage converters allow- ing system miniaturization and higher efficiencies.

Specifications

Symbol	Parameter	Value		Unit
		STP4NM60	STD3NM60 STD3NM60-1
VDS	Drain-source Voltage (VGS = 0)	600		V
VDGR	Drain-gate Voltage (RGS = 20 )	600		V
VGS	Gate- source Voltage	±30		V
ID	Drain Current (continuous) at TC = 25	4	3	A
ID	Drain Current (continuous) at TC = 100	52	1.9	A
IDM(`)	Drain Current (pulsed)	6	12	A
PTOT	Total Dissipation at TC = 25	69	42	W
dv/dt(1)	Peak Diode Recovery voltage slope	15		V/ns
VISO	Insulation Withstand Voltage (DC)	-	2500	V
Tstg Tj	Operating Junction Temperature Storage Temperature	-65 to 150 -65 to 150

Description

The STD3NM60-1 MDmesh^TM is a new revolutionary MOSFET technology that associates the Multiple Drain pro-cess with the Company's PowerMESH^TM horizonta layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overal dynamic performance that is significantly better than that of similar completition's products.

Parameters:

Technical/Catalog Information	STD3NM60-1
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	1.5 Ohm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds	324pF @ 25V
Power - Max	42W
Packaging	Tube
Gate Charge (Qg) @ Vgs	14nC @ 10V
Package / Case	IPak, TO-251, DPak, VPak (3 straight leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STD3NM60 1 STD3NM601