IGBT Transistors PowerMESH" IGBT
STGD6NC60HDT4: IGBT Transistors PowerMESH" IGBT
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| Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V |
| Collector-Emitter Saturation Voltage : | 1.9 V | Maximum Gate Emitter Voltage : | +/- 20 V |
| Gate-Emitter Leakage Current : | 100 nA | Power Dissipation : | 50 W |
| Maximum Operating Temperature : | + 150 C | Package / Case : | DPAK-3 |
| Packaging : | Reel |
| Technical/Catalog Information | STGD6NC60HDT4 |
| Vendor | STMicroelectronics (VA) |
| Category | Discrete Semiconductor Products |
| Input Type | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 15A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 3A |
| Power - Max | 56W |
| Mounting Type | Surface Mount |
| Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
| Packaging | Digi-Reel? |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STGD6NC60HDT4 STGD6NC60HDT4 497 5112 6 ND 49751126ND 497-5112-6 |