STGP6NC60HD

IGBT Transistors PowerMESH" IGBT

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SeekIC No. : 00142406 Detail

STGP6NC60HD: IGBT Transistors PowerMESH" IGBT

floor Price/Ceiling Price

US $ .89~1.4 / Piece | Get Latest Price
Part Number:
STGP6NC60HD
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.4
  • $1.13
  • $1
  • $.89
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/23

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 600 V
Collector-Emitter Saturation Voltage : 1.9 V Maximum Gate Emitter Voltage : +/- 20 V
Gate-Emitter Leakage Current : 100 nA Maximum Operating Temperature : + 150 C
Package / Case : TO-220-3 Packaging : Tube    

Description

Continuous Collector Current at 25 C :
Power Dissipation :
Collector- Emitter Voltage VCEO Max : 600 V
Gate-Emitter Leakage Current : 100 nA
Maximum Operating Temperature : + 150 C
Packaging : Tube
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 1.9 V
Package / Case : TO-220-3


Features:

Type VCES VCE(sat)max
@25°C
IC
@100°C
STGB6NC60HD
600V
<2.5V
7A
STGB6NC60HD-1
600V
<2.5V
7A
STGP6NC60HD
600V
<2.5V
7A
STGF6NC60HD
600V
<2.5V
3A
Low on voltage drop (Vcesat)
Low CRES / CIES ratio (no cross-conduction susceptibility)
Very soft ultra fast recovery antiparallel diode
High frequency operation



Application

High frequency inverters
SMPS and PFC in both hard switch and resonant topologies
Motor drivers



Specifications

Symbol
Parameter
Value
Unit
D²PAK/I²PAK/TO-220 TO-220FP
VCES
Collector-emitter voltage (VGS = 0)
600
V
IC(1)
Collector current (continuous) at TC = 25°C
15
6
A
IC(1)
Collector current (continuous) at TC = 100°C
7
3
A
ICM(2)
Collector current (pulsed)
21
A
VGE
Gate-emitter voltage
±20
V
IF
Diode RMS forward current at Tc=25°C
10
A
PTOT
Total dissipation at TC = 25°C
56
20
W
VISO
Insulation withstand voltage A.C.(t=1sec;Tc=25°C)
--
2500
Tstg
Storage temperature
55 to 150
°C
Tj
Operating junction temperature
TI
Maximum lead temperature for soldering purpose
(for 10sec. 1.6 mm from case)
300
°C

1. Calculated according to the iterative formula::IC(TC)=TJMAX TC/RTHJ C * VCESAT(MAX)(TC, IC)
2. Pulse width limited by max junction temperature




Description

Using the latest high voltage technology based on a patented strip layout, STGP6NC60HD STMicroelectronics has designed an advaced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.




Parameters:

Technical/Catalog InformationSTGP6NC60HD
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Input TypeStandard
Voltage - Collector Emitter Breakdown (Max)600V
Current - Collector (Ic) (Max)15A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 3A
Power - Max56W
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STGP6NC60HD
STGP6NC60HD
497 5122 5 ND
49751225ND
497-5122-5



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