MFG:ST Package Cooled:02+ D/C:220
MFG: ST
Package Cooled: 02+
D/C: 220
Description: This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell ...
This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
| Symbol | Parameter | Value | Unit | |
| STP10NA40 | STP10NA40FI | |||
| VDS | Drain-source Voltage (VGS = 0) | 400 | V | |
| VDGR | Drain-gate Voltage (RGS = 20 k ) | 400 | V | |
| VGS | Gate- source Voltage | ± 30 | V | |
| ID(*) | Drain Current (continuos) at TC = 25 |
10 |
6 | A |
| ID(*) | Drain Current (continuos) at TC = 100 | 6.3 | 3.8 | A |
| IDM() | Drain Current (pulsed) | 40 | 40 | A |
| PTOT | Total Dissipation at TC = 25 | 125 | 45 | W |
| Derating Factor | 1 | 0.36 | W/ | |
| VISO | Insulation Withstand Voltage (DC) | _ | 2000 | V |
| Tstg | Storage Temperature | 65 to 150 | ||
| Tj | Max. Operating Junction Temperature | 150 | ||
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWERSUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
STP10NA40
PDF/DataSheet Download
This Power MOSFET STP100NF04Lis the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less...
This Power Mosfet STP100NF04is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and les...
This Power MOSFET STP100NF03L-03is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and l...
The STP08IE120F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications.STP08IE120F4 is designed for use in Gate Driven based topologies.
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