MFG:ST Package Cooled:1335 D/C:IC
MFG: ST
Package Cooled: 1335
D/C: IC
Description: Using the latest high voltage MESH OVERLAYTMprocess, STMicroelectronics has designed an adv...
Using the latest high voltage MESH OVERLAYTMprocess, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
| Symbol | Parameter | Value | Unit | |
| STP16NB25 | STP16NB25FP | |||
| VDS | Drain-source Voltage (VGS = 0) | 500 | V | |
| VDGR | Drain-gate Voltage (RGS = 20 k ) | 500 | V | |
| VGS | Gate- source Voltage | ±30 | V | |
| ID | Drain Current (continuos) at TC = 25 |
10 |
10(*) | A |
| ID | Drain Current (continuos) at TC = 100 | 6.3 | 6.3(*) | A |
| IDM() | Drain Current (pulsed) | 40 | 40 | A |
| PTOT | Total Dissipation at TC = 25 | 135 | 40 | W |
| Derating Factor | 1.08 | 0.32 | W/ | |
| dv/dt (1) | Peak Diode Recovery voltage slope | 3 | 3 | V/ns |
| VISO | Insulation Withstand Voltage (DC) | ----- | 2000 | V |
| Tstg | Storage Temperature | 65 to 150 | ||
| Tj | Max. Operating Junction Temperature | 150 | ||
STP10NC50FP
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Using the latest high voltage STP10NC50 ESH OVERLAYTMprocess, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination struc...
Using the latest high voltage STP10NB50FP MESH OVERLAYTMprocess, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination st...
Using the latest high voltage STP10NB50 MESH OVERLAYTMprocess, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination stru...
Using the latest high voltage STP10NB20FP MESH OVERLAY] process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure...
Using the latest high voltage STP10NB20 MESH OVERLAY] process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, ...
This series of POWER MOSFETSSTP10NA40FI represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior ...
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