STP10NK80Z

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 9 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 900 mOhms


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES
DC-AC CONVERTERS FOR WELDING, UPS AND MOTOR DRIVE


Specifications

Symbol	Parameter	Value			Unit
		STP10NK80Z	STP10NK80ZFP	STW10NK80Z
VDS	Drain-source Voltage (VGS = 0)	800			V
VDGR	Drain- gate Voltage (RGS = 20 k)	800			V
VGS	Gate-Source Voltage	± 30			V
ID	Drain Current (continuous) at Tc = 25	9	9 (*)	9	A
ID	Drain Current (continuous) at Tc = 100	6	6 (*)	6	A
IDM(`)	Drain Current (pulsed)	36	36 (*)	36	A
PTOT(1)	Total Dissipation at Tc = 25	160	40	160	W
	Derating Factor	1.28	0.32	1.28	W/
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5KW)	4			KV
dv/dt (1)	Peak Diode Recovery voltage slope	4.5			V/ns
VISO	Insulation Withstand Voltage (DC)		2500		V
Tstg Tj	Operating Junction Temperature Storage Temperature	-55 to 150 -55 to 150

(•)Pulse width limited by safe operating area (1)ISD9A, di/dt200A/µs, V_DD0V(BR)DSS, Tj0 TJMAX
((*) Limited only by maximum temperature allowed


Description

The STP10NK80Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.