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Part Number: STP10NK80ZFP
Description: The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip...


Description: The SuperMESH™ series is obtained through an extreme optimization of ST's well established strip...
The SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
|
Symbol |
Parameter |
Value |
Unit | ||
|
STP10NK80Z |
STP10NK80ZFP |
STW10NK80Z |
|||
|
VDS |
Drain-source Voltage (VGS = 0) |
800 |
V | ||
|
VDGR |
Drain- gate Voltage (RGS = 20 k) |
800 |
V | ||
|
VGS |
Gate-Source Voltage |
± 30 |
V | ||
|
ID |
Drain Current (continuous) at Tc = 25 |
9 |
9 (*) |
9 |
A |
|
ID |
Drain Current (continuous) at Tc = 100 |
6 |
6 (*) |
6 |
A |
|
IDM(`) |
Drain Current (pulsed) |
36 |
36 (*) |
36 |
A |
|
PTOT(1) |
Total Dissipation at Tc = 25 |
160 |
40 |
160 |
W |
|
Derating Factor |
1.28 |
0.32 |
1.28 |
W/ | |
| VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5KW) |
4 |
KV | ||
|
dv/dt (1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns | ||
| VISO |
Insulation Withstand Voltage (DC) |
2500 |
V | ||
|
Tstg
Tj |
Operating Junction Temperature Storage Temperature |
-55 to 150 -55 to 150 |
| ||
STP10NK80ZFP
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