STP11NB40

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.48 Ohms
Drain-Source Breakdown Voltage : 400 V
Continuous Drain Current : 10.7 A


Features:

 TYPICAL R_DS(on) = 0.48
EXTREMELY HIGH dV/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES(SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENTAND UNINTERRUPTIBLE POWERSUPPLIES AND MOTOR DRIVE

Specifications

Symbol	Parameter	Value		Unit
		STP16NB25	STP16NB25FP
VDS	Drain-source Voltage (VGS = 0)	400		V
VDGR	Drain-gate Voltage (RGS = 20 k )	400		V
VGS	Gate- source Voltage	±30		V
ID	Drain Current (continuos) at TC = 25	10.7	6.0	A
ID	Drain Current (continuos) at TC = 100	6.7	3.8	A
IDM()	Drain Current (pulsed)	42.8	42.8	A
PTOT	Total Dissipation at TC = 25	125	40	W
	Derating Factor	1.0	0.32	W/
dv/dt (1)	Peak Diode Recovery voltage slope	4.5	4.5	V/ns
VISO	Insulation Withstand Voltage (DC)	-----	2000	V
Tstg	Storage Temperature	65 to 175
Tj	Max. Operating Junction Temperature	175

(•) Pulse width limited by safe operating area ( 1) I_SD  10.7A, di/dt  200 A/ms, V_DD  V_(BR)DSS, T_j  T_JMAX

Description

Using the latest high voltage STP11NB40 MESH OVERLAY^TM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.