STP11NC40FP

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220FP
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 9.5 A
Resistance Drain-Source RDS (on) : 0.55 Ohms
Drain-Source Breakdown Voltage : 400 V


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER


Specifications

Symbol	Parameter	Value		Unit
		STP10NK80Z	STP10NK80ZFP
VDS	Drain-source Voltage (VGS = 0)	400		V
VDGR	Drain- gate Voltage (RGS = 20 k)	400		V
VGS	Gate-Source Voltage	± 30		V
ID	Drain Current (continuous) at Tc = 25	9.5	9.5 (*)	A
ID	Drain Current (continuous) at Tc = 100	6	6 (*)	A
IDM(`)	Drain Current (pulsed)	38	38 (*)	A
PTOT	Total Dissipation at Tc = 25	120	30	W
	Derating Factor	0.96	0.24	W/
dv/dt (1)	Peak Diode Recovery voltage slope	3.5		V/ns
VISO	Insulation Withstand Voltage (DC)	2500		V
Tstg	Storage Temperature	-55 to 150
Tj	Operating Junction Temperature	-55 to 150

(•)Pulse width limited by safe operating area (1)ISD9.5A, di/dt100A/µs, V_DD0V(BR)DSS, Tj0 TJMAX
(*) Limited only by maximum temperature allowed


Description

The STP11NC40FP PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.