STP11NK50Z

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 10 A
Resistance Drain-Source RDS (on) : 0.52 Ohms


Features:

`  TYPICAL R<sub>DS(on)</sub> = 0.48
`  EXTREMELY HIGH dv/dt CAPABILITY
`  100% AVALANCHE TESTED
`  GATE CHARGE MINIMIZED
`  VERY LOW INTRINSIC CAPACITANCES
`  VERY GOOD MANUFACTURING REPEATIBILITY
`  ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL (D2PAK VERSION)


Application

·  HIGH CURRENT, HIGH SPEED SWITCHING
·  IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
·  LIGHTING


Specifications

Symbol	Parameter	Value			Unit
		TO-220/D2PAK	TO-220FP
VDS	Drain-source Voltage (VGS = 0)	500			V
VDGR	Drain-gate Voltage (RGS = 20 k)	500			V
VGS	Gate- source Voltage	± 30			V
ID	Drain Current (continuos) at TC = 25	10	10(*)		A
ID	Drain Current (continuos) at TC = 100	6.3	6.3(*)		A
IDM(`)	Drain Current (pulsed)	40	40(*)		A
PTOT	Total Dissipation at TC = 25	125	30		W
	Derating Factor	1	0.24		W/
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	4000			V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5			V/ns
VISO	Insulation Withstand Voltage (DC)	-	2500	-	V
Tj Tstg	Operating Junction Temperature Storage Temperature	55 to 150 55 to 150

(`) Pulse width limited by safe operating area
(1) I_SD 10 A, di/dt 200A/s, V_DD V_(BR)DSS, T_j T_JMAX.
(*) Limited only by maximum temperature allowed


Description

The STP11NK50Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.