STP120NF10

MOSFET N-Ch 100 Volt 120A STripFET II 110A

product image

STP120NF10 Picture
SeekIC No. : 00146179 Detail

STP120NF10: MOSFET N-Ch 100 Volt 120A STripFET II 110A

floor Price/Ceiling Price

US $ 1.12~1.71 / Piece | Get Latest Price
Part Number:
STP120NF10
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.71
  • $1.43
  • $1.29
  • $1.12
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/24

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 110 A
Resistance Drain-Source RDS (on) : 10.5 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 110 A
Resistance Drain-Source RDS (on) : 10.5 mOhms


Features:

` TYPICAL RDS(on) = 0.009
` EXCEPTIONAL dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` APPLICATION ORIENTED CHARACTERIZATION
` SURFACE-MOUNTING D²PAK (TO-263)
  POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")



Application

 · AUDIO AMPLIFIERS
 · POWER TOOLS



Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
100
V
VDGR Drain-gate Voltage (RGS = 20 k)
100
V
VGS Gate- source Voltage
±20
V
ID Drain Current (continuos) at TC = 25
120
A
ID Drain Current (continuos) at TC = 100
85
A
IDM() Drain Current (pulsed)
480
A
Ptot Total Dissipation at TC = 25
312
W
Derating Factor
2.08
W/
dv/dt (1) Peak Diode Recovery voltage slope
10
V/ns
EAS(2) Single Pulse Avalanche Energy
550
mJ
Tstg Storage Temperature
55 to 175
Tj Max. Operating Junction Temperature

() Pulse width limited by safe operating area.
(1) ISD120A, di/dt 300A/s, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 , ID = 60A, VDD = 50V




Description

This MOSFET series STP120NF10 realized with STMicroelectronics unique STripFET process has specifically been designed to minimize the on-resistance. It is therefore suitable as primary switch in advanced high-efficiency, highfrequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.




Parameters:

Technical/Catalog InformationSTP120NF10
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C110A
Rds On (Max) @ Id, Vgs10.5 mOhm @ 60A, 10V
Input Capacitance (Ciss) @ Vds 5200pF @ 25V
Power - Max312W
PackagingTube
Gate Charge (Qg) @ Vgs233nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP120NF10
STP120NF10
497 4118 5 ND
49741185ND
497-4118-5



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Test Equipment
Computers, Office - Components, Accessories
Hardware, Fasteners, Accessories
Isolators
Power Supplies - External/Internal (Off-Board)
View more