Position: Home  > All Categories> Integrated Circuits (ICs) > STP12NK80Z

STP12NK80Z

MOSFET N-Ch 800 Volt 10.5A Zener SuperMESH

product image

STP12NK80Z Picture
See larger image
SeekIC No. : 00159053 Detail

STP12NK80Z: MOSFET N-Ch 800 Volt 10.5A Zener SuperMESH

STP12NK80Z Data Sheet

floor Price/Ceiling Price

US $ 1.11~1.41 / Piece | Get Latest Price
Part Number:
STP12NK80Z
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~630
  • 630~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $1.41
  • $1.21
  • $1.16
  • $1.11
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/17

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 10.5 A
Resistance Drain-Source RDS (on) : 0.75 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.75 Ohms
Drain-Source Breakdown Voltage : 800 V
Continuous Drain Current : 10.5 A


Features:

 · EXTREMELY HIGH dv/dt CAPABILITY
 · IMPROVED ESD CAPABILITY
 · 100% AVALANCHE TESTED
 · GATE CHARGE MINIMIZED
 · VERY LOW INTRINSIC CAPACITANCES
 · VERY GOOD MANUFACTURING REPEABILITY


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTOR AND PFC


Specifications

Symbol Parameter
Value
Unit
VDS Drain-Source Voltage (VGS = 0)
800
V
VDGR Drain-gate Voltage (RGS = 20k)
800
V
VGS Gate-Source Voltage
± 30
V
ID Drain Current (continuous) at TC = 25
10.5
A
ID Drain Current (continuous) at TC = 100
6.6
A
IDM Note 2 Drain Current (pulsed)
42
A
PTOT Total Dissipation at TC = 25
190
W
  Derating Factor
1.51
W/
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5k)
6000
V
dv/dt Note 1 Peak Diode Recovery voltage slope
4.5
V/ns
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
-55 to 150



Description

The STP12NK80Z SuperMESH™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Integrated Circuits (ICs)
TA8435H
1MB12-140
Isolators
HCPL062N
HCPL316J
Tapes, Adhesives
803
AC452-2
LED Products
LM24P20
KCG057QV1DB-G770
Audio Products
HUC1002
WM-64CT
View more