STP15NK50Z

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.34 Ohms
Continuous Drain Current : 14 A


Features:

` TYPICAL R<sub>DS(on)</sub> = 0.30
` EXTREMELY HIGH dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` GATE CHARGE MINIMIZED
` VERY LOW INTRINSIC CAPACITANCES
` VERY GOOD MANUFACTURING REPEATIBILITY


Application

·  HIGH CURRENT, HIGH SPEED SWITCHING
·  IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC
·  LIGHTING


Specifications

Symbol	Parameter	Value			Unit
		STP15NK50Z STB15NK50Z STB15NK50Z-1	STP15NK50ZFP	STW15NK50Z
VDS	Drain-source Voltage (VGS = 0)	500			V
VDGR	Drain-gate Voltage (RGS = 20 k)	500			V
VGS	Gate- source Voltage	±30			V
ID	Drain Current (continuos) at TC = 25	14	14(*)	14	A
ID	Drain Current (continuos) at TC = 100	8.8	8.8(*)	8.8	A
IDM(`)	Drain Current (pulsed)	56	56(*)	56	A
PTOT	Total Dissipation at TC = 25	160	40	160	W
	Derating Factor	1.28	0.32	1.28	W/
IGS	Gate-source Current (DC)				mA
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5K)	4000			V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5			V/ns
VISO	Insulation Withstand Voltage (DC)	--	2500	-	V
Tj Tstg	Operating Junction Temperature Storage Temperature	-55 to 150 -55 to 150

(`) Pulse width limited by safe operating area
(1) I_SD 14A, di/dt 200A/s, V_DD V_(BR)DSS, T_j T_JMAX.
(*) Limited only by maximum temperature allowed


Description

The STP15NK50Z SuperMESH™ series is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such STP15NK50Z series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.