MFG:ST Package Cooled:TO-220FP D/C:08+
MFG: ST
Package Cooled: TO-220FP
D/C: 08+
Description: This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size"process whereby...
This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size"process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance,rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
| Symbol | Parameter | Value | Unit | |
| STP16NE06 | STP16NE06FP | |||
| VDS | Drain-source Voltage (VGS = 0) | 60 | V | |
| VDGR | Drain-gate Voltage (RGS = 20 k ) | 60 | V | |
| VGS | Gate- source Voltage | ±20 | V | |
| ID | Drain Current (continuos) at TC = 25 |
16 |
11 | A |
| ID | Drain Current (continuos) at TC = 100 | 10 | 7 | A |
| IDM() | Drain Current (pulsed) | 64 | 64 | A |
| PTOT | Total Dissipation at TC = 25 | 60 | 30 | W |
| Derating Factor | 0.4 | 0.2 | W/ | |
| VISO | Insulation Withstand Voltage (DC) | ----- | 2000 | V |
| dV/dt | Peak Diode Recovery voltage slope | 6 | V/ns | |
| Tstg | Storage Temperature | 65 to 175 | ||
| Tj | Max. Operating Junction Temperature | 175 | ||
STP16NE06FP
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This Power Mosfet STP16NE06is the latest development of SGS-THOMSON unique "Single Feature Size"process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance,rugged ...
Using the latest high voltage STP16NB25FP MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination s...
Using the latest high voltage STP16NB25 MESH OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination str...
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