Features: TYPICAL RDS(on) = 0.08 AVALANCHE RUGGED TECHNOLOGY100% AVALANCHE TESTED175oC OPERATING TEMPERATUREHIGH dV/dt CAPABILITYAPPLICATION ORIENTED CHARACTERIZATIONApplicationDC MOTOR CONTROLDC-DC & DC-AC CONVERTERSSYNCHRONOUS RECTIFICATIONSpecifications Symbol Parameter Value Unit ...
STP16NE06FP: Features: TYPICAL RDS(on) = 0.08 AVALANCHE RUGGED TECHNOLOGY100% AVALANCHE TESTED175oC OPERATING TEMPERATUREHIGH dV/dt CAPABILITYAPPLICATION ORIENTED CHARACTERIZATIONApplicationDC MOTOR CONTROLDC-DC...
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ApplicationHIGH CURRENT, HIGH SWITCHING SPEED MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CO...
| Symbol | Parameter | Value | Unit | |
| STP16NE06 | STP16NE06FP | |||
| VDS | Drain-source Voltage (VGS = 0) | 60 | V | |
| VDGR | Drain-gate Voltage (RGS = 20 k ) | 60 | V | |
| VGS | Gate- source Voltage | ±20 | V | |
| ID | Drain Current (continuos) at TC = 25 |
16 |
11 | A |
| ID | Drain Current (continuos) at TC = 100 | 10 | 7 | A |
| IDM() | Drain Current (pulsed) | 64 | 64 | A |
| PTOT | Total Dissipation at TC = 25 | 60 | 30 | W |
| Derating Factor | 0.4 | 0.2 | W/ | |
| VISO | Insulation Withstand Voltage (DC) | ----- | 2000 | V |
| dV/dt | Peak Diode Recovery voltage slope | 6 | V/ns | |
| Tstg | Storage Temperature | 65 to 175 | ||
| Tj | Max. Operating Junction Temperature | 175 | ||
This Power Mosfet STP16NE06FP is the latest development of SGS-THOMSON unique "Single Feature Size"process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance,rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.