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STP16NM50N

MOSFET N Ch 600V 7A Pwr MESH IGBT

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SeekIC No. : 00159808 Detail

STP16NM50N: MOSFET N Ch 600V 7A Pwr MESH IGBT

STP16NM50N Data Sheet

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Part Number:
STP16NM50N
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/5

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 0.26 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Package / Case : TO-220
Continuous Drain Current : 15 A
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.26 Ohms


Parameters:

Technical/Catalog InformationSTP16NM50N
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs260 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds 1200pF @ 50V
Power - Max125W
PackagingTube
Gate Charge (Qg) @ Vgs38nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP16NM50N
STP16NM50N
497 7510 5 ND
49775105ND
497-7510-5



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