STP20NE06L

MOSFET N-Ch 60 Volt 20 Amp

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SeekIC No. : 00161767 Detail

STP20NE06L: MOSFET N-Ch 60 Volt 20 Amp

floor Price/Ceiling Price

Part Number:
STP20NE06L
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 20 A
Resistance Drain-Source RDS (on) : 0.07 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Continuous Drain Current : 20 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.07 Ohms


Features:

 TYPICAL RDS(on) = 0.06  
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE 100
APPLICATIONORIENTED CHARACTERIZATION



Application

DC MOTOR CONTROL
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION



Specifications

Symbol Parameter Value Unit
STP20NE06 STP20NE06FP
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain-gate Voltage (RGS = 20 k ) 60 V
VGS Gate- source Voltage ±20 V
ID Drain Current (continuos) at TC = 25
20
13 A
ID Drain Current (continuos) at TC = 100 14 9 A
IDM() Drain Current (pulsed) 80 80 A
PTOT Total Dissipation at TC = 25 70 30 W
  Derating Factor 0.47 0.2 W/
VISO Insulation Withstand Voltage (DC) ----- 2000 V
dV/dt Peak Diode Recovery voltage slope 7 V/ns
Tstg Storage Temperature 65 to 175
Tj Max. Operating Junction Temperature 175
(•) Pulse width limited by safe operating area   ( 1) ISD  20 A, di/dt   300 A/s, VDD   V(BR)DSS, Tj   TJMAX


Description

This STP20NE06L Power Mosfet is the latest development of STMicroelectronics unique " Single Feature Size] " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Parameters:

Technical/Catalog InformationSTP20NE06L
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs70 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 800pF @ 25V
Power - Max70W
PackagingTube
Gate Charge (Qg) @ Vgs20nC @ 5V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names STP20NE06L
STP20NE06L
497 2764 5 ND
49727645ND
497-2764-5



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