STP22NF03L

MOSFET N-Ch 30 Volt 22 Amp

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SeekIC No. : 00162840 Detail

STP22NF03L: MOSFET N-Ch 30 Volt 22 Amp

floor Price/Ceiling Price

Part Number:
STP22NF03L
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/24

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 15 V Continuous Drain Current : 22 A
Resistance Drain-Source RDS (on) : 0.05 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 15 V
Package / Case : TO-220
Continuous Drain Current : 22 A
Resistance Drain-Source RDS (on) : 0.05 Ohms


Application

 DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
AUTOMOTIVE ENVIRONMENT



Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain- gate Voltage (RGS = 20 k)
30
V
VGS
Gate-Source Voltage
± 15
V
ID
Drain Current (continuous) at Tc = 25
22
A
ID

Drain Current (continuous) at Tc = 100
16
A
IDM(`)
Drain Current (pulsed)
88
A
PTOT
Total Dissipation at Tc = 25
45
W
Derating Factor
0.3
W/
dv/dt (1)
Peak Diode Recovery voltage slope
6
V/ns
EAS (2) Single Pulse Avalanche Energy 200 mJ
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
175
(•)Pulse width limited by safe operating area (1)ISD10A, di/dt 300A/µs, VDD32V(, Tj TJMAX
(2) Starting Tj = 25 , ID = 11A, VDD = 15V


Description

This STP22NF03L Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Parameters:

Technical/Catalog InformationSTP22NF03L
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C22A
Rds On (Max) @ Id, Vgs50 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds 330pF @ 25V
Power - Max45W
PackagingTube
Gate Charge (Qg) @ Vgs9nC @ 5V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP22NF03L
STP22NF03L
497 7516 5 ND
49775165ND
497-7516-5



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