STP24NF10

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 70 mOhms
Continuous Drain Current : 26 A


Features:

 TYPICAL RDS(on) = 0.07
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATIONORIENTED CHARACTERIZATION


Application

 HIGH-EFFICIENCYDC-DC CONVERTERS
UPS AND MOTOR CONTROL


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	100	V
VDGR	Drain-gate Voltage (RGS = 20 k )	100	V
VGS	Gate- source Voltage	±20	V
ID	Drain Current (continuos) at TC = 25	24	A
ID	Drain Current (continuos) at TC = 100	15	A
IDM()	Drain Current (pulsed)	96	A
PTOT	Total Dissipation at TC = 25	80	W
	Derating Factor	0.53	W/
dv/dt (1)	Peak Diode Recovery voltage slope	9	V/ns
EAS(2)	Single Pulse Avalanche Energy	75	mJ
Tstg	Storage Temperature	-65 to 175
Tj	Max. Operating Junction Temperature	175

() Pulse width limited by safe operating area. (1) I_SD 24A, di/dt  300 A/s, V_DD V_(BR)DSS, T_j T_JMAX (2) Starting T_j = 25 , I_D = 24A, V_DD = 50V

Description

This MOSFET series STP24NF10 realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.