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Part Number: STP2NC70ZFP

 

MFG: ST

Package Cooled: TO-

 

Description: The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed o...


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STP2NC70ZFP General Description


The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.

STP2NC70ZFP Maximum Ratings

Symbol Parameter
Value
Unit
STP2NC70Z
STP2NC70ZFP
STD1NC70Z
STD1NC70Z-1
VDS Collector-Source Voltage (VGS = 0 V)
700
V
VDGR Drain-gate Voltage (RGS = 20 k)

700
V
VGS Gate-Source Voltage
±25
V
ID Drain Current (continuous) at TC = 25
1.4
1.4(*)
1.4
A
ID Drain Current (continuous) at TC = 100
0.9

0.9(*)
0.9
A
IDM(`) Drain Current (pulsed)
5.6
5.6(*)
5.6
A
Ptot Total Dissipation at TC = 25
50
25
45
W
Derating Factor
0.4
0.2
0.36
W/
IGS Gate-source Current (DC)
±50
mA
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5K)
2000
V
dv/dt(1) Peak Diode Recovery voltage slope
3
V/ns
Tj
Tstg		 Operating Junction Temperature
Storage Temperature
-65 to 150
-65 to 150

(`) Pulse width limited by safe operating area
(1) ISD 10A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX.
(*) Limited only by maximum temperature allowed

STP2NC70ZFP Features

`  TYPICAL RDS(on) = 7.3
`  EXTREMELY HIGH dv/dt CAPABILITY
`  100% AVALANCHE TESTED
`  GATE CHARGE MINIMIZED
`  VERY LOW INTRINSIC CAPACITANCES

STP2NC70ZFP Typical Application

·  SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION
·  WELDING EQUIPMENT

STP2NC70ZFP datasheet

STP2NC70ZFP
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  • Datasheet: STP2NC70ZFP
  • File Size: 649470 KB
  • Manufacturer: STMICROELECTRONICS [STMicroelectronics]
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