STP6NB90

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 900 V
Continuous Drain Current : 5.8 A
Resistance Drain-Source RDS (on) : 2 Ohms


Application

HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES(SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

Specifications

Symbol	Parameter	Value		Unit
		STP6NB90	STP6NB90FP
VDS	Drain-source Voltage (VGS = 0)	900		V
VDGR	Drain- gate Voltage (RGS =20k?)	900		V
VGS	Gate-source Voltage	± 30		V
ID	Drain Current (continuous) at Tc =25o C	5.8	5.8(*)	A
ID	Drain Current (continuous) at Tc =100 oC	3.6	3.6(*)	A
IDM(*)	Drain Current (pulsed)	23	23	A
Ptot	Total Dissipation at Tc =25o C	135	40	W
	Derating Factor	0.92	0.32	W/ oC
dv/dt(1)	Peak Diode Recovery voltage slope	4.5	4.5	V/ns
VISO	Insulation Withstand Voltage (DC)	-	2000	V
Tstg	Storage Temperature	-65 to 150		oC
Tj	Max. Operating Junction Temperature	150		oC

Description

Using the latesthigh voltageMESH OVERLAY(TM) process, STMicroelectronics has designed an advanced family of power MOSFETs STP6NB90 with outstanding performances. The new patent pending strip layout coupled with the Company'sproprietary edge termination structure, gives the owest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge andswitchingcharacteristics.