MFG:ST Package Cooled:06+ D/C:TO-220
MFG: ST
Package Cooled: 06+
D/C: TO-220
Description: This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM
This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
| Symbol | Parameter | Value | Unit | |
| STP75NE75 | STP75NE75FP | |||
| VDS | Drain-source Voltage (VGS = 0) | 75 | V | |
| VDGR | Drain- gate Voltage (RGS = 20 k) | 75 | V | |
| VGS | Gate-source Voltage | ± 20 | V | |
| ID | Drain Current (continuous) at Tc = 25 | 75 | 40 | A |
| ID | Drain Current (continuous) at Tc = 100 | 63 | 28 | A |
| IDM(`) | Drain Current (pulsed) | 300 | 160 | A |
| Ptot | Total Dissipation at Tc = 25 | 160 | 50 | W |
| Derating Factor | 1.06 | 0.37 | W/ | |
| VISO | Insulation Withstand Voltage (DC) | - | 2000 | V |
| dv/dt | Peak Diode Recovery voltage slope | 7 | V/ns | |
| Tstg | Storage Temperature | -65 to 175 | ||
| Tj | Max. Operating Junction Temperature | 175 | ||
STP75NE75
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